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Simply & Benefits. Highly cost effective. Excellent confocality. Unique design for easy filter exchange. Affordable for individual labs. Real-time control and viewing. Suitable for live and fixed specimens. High throughputAndor's Revolution DSD is an innovative imaging technology that brings an affordable confocal solution to your laboratory, offering you less dependency on laser-based solutions often restricted to core facilities. Whilst laser-free, the Revolution DSD can still achieve the optical sectioning you expect of a complex laser scanning confocal system, but with low maintenance costs.Laser Free Confocal MicroscopyRevolutionDSD"The key benefit is that at a relatively low cost we have access to a powerful microscopy system that allows optical, wide field and confocal fluorescence in combination with our TIRF and Raman microscopy. In the future we can easily change the system to a different excitation emission combination - something that would be prohibitively expensive with lasers"Dr. Wesley R. Browne, University of GroningenCIRCLE NO. 5 OR ONLINE:

solutions for the fabrication of high value-added heterogeneous components and sys-tems including memories, logic, sensors, actu-ators and wireless communications. Partici-pants in the program include materialproviders, laboratories, research centers andmanufacturers of equipment, componentsand systems.The project is structured around five themes:·Methodology and evaluation tools to inte-grate elementary components in 3D systems.·3D technologies and integration processesonto materials and non-silicon substrates.·3D technologies and integration processesonto silicon, using processes closely derivingfrom microelectronics.·Reliability methodologies and analysis forintegrated 3D systems.·Performance evaluation and equipment val-idation for volume production equipment andgeneric manufacturing.SINTEF, The Fraunhofer Institute and FEI areparticipants in JEMSiP_3D, and the work pre-sented here was funded in part by the project.3D INTEGRATIONWhile the performance and productivity ofmicroelectronics have increased continuouslyover more than four decades due to the enor-mous advances in lithography and device tech-nology, it has now become questionable ifadvances in these areas alone will be able toBIOGRAPHYMaaike M. V. Takloreceived her PhD in phys-ical electronics from theUniversity of Oslo in 2002for her thesis entitled'Wafer bonding forMEMS'. From 1998 until2010 she was employed at the Departmentof Microsystems and Nanotechnologywithin SINTEF ICT in Norway where sheworked on MEMS processing and wasresponsible for their wafer level bondingactivities. Maaike is now a senior scientist atSINTEF ICT at the Department of Instrumen-tation and is the group leader for 'AdvancedPackaging and Interconnects'.ABSTRACT3D integration schemes connect stackedintegrated circuits using through silicon vias(TSV) and special bonding techniques. Phys-ical characterization of these TSVs andbonds is essential, but their relatively largesize (tens or hundreds of micrometers)requires prohibitively long milling times inthe conventional focused ion beam (FIB) sys-tems typically used for this work. A newplasma-based FIB system can remove mater-ial more than 20 times faster, providing thespeed and precision required to ensurerobust processes and reliable products.KEYWORDSfocused ion beam, scanning electronmicroscopy, plasma ion source, ion beammilling, 3D integration, through silicon viasACKNOWLEDGEMENTSA part of this work has been performed inthe project JEMSiP_3D, which is funded bythe public authorities in France, Germany,Hungary, The Netherlands, Norway andSweden, as well as by the ENIAC JointUndertaking.AUTHOR DETAILSDr Maaike M. Visser Taklo, SINTEF ICT, Department of Instrumentation,PO Box 124 Blindern, N-0314 Oslo, NorwayTel: +47 2206 7300Email:MaaikeMargrete.VisserTaklo@sintef.nowww.sintef.noMicroscopy and Analysis25(7):9-12 (EU), 2011PFIB INMICROELECTRONICSINTRODUCTION3D integration schemes, which stack inte-grated circuits and other microelectronic orMEMS devices and interconnect them usingthrough silicon vias (TSV), are likely to be thenext revolution in electronic fabrication. Theycan be used to continue the increases in speedand density of microelectronic systemsdescribed by Moore's Law (More Moore), butthey may offer even greater benefits whenused to connect devices of different technolo-gies (More than Moore), packing more perfor-mance and functionality into smaller volumes. In either case, the ability to physically char-acterize the TSVs and mechanical bonds usedin 3D integration is essential for developingrobust manufacturing processes and fabricat-ing reliable products. Focused ion beam (FIB)systems have long provided physical analysisin the manufacture of integrated circuits, butconventional FIB cannot remove material fastenough to analyze these relatively large struc-tures used in 3D integration. The launch of anew plasma-based FIB system now providesthe speed and precision needed to developand deploy these exciting new technologies.JEMSiP_3DThe Joint Equipment and Materials for System-in-Package and 3D Integration (JEMSiP_ 3D) isa project undertaken by a consortium of Euro-pean manufacturers to validate technologicalBonding and TSV in 3D IC Integration:Physical Analysis with a Plasma FIBMaaike M. V. Taklo,1Armin Klumpp,2Peter Ramm,2Laurens Kwakman3and German Franz31. SINTEF, Oslo, Norway. 2. Fraunhofer EMFT, Munich, Germany. 3. FEI Company, Eindhoven, The NetherlandsFigure 1a: Schematic of a xenon plasma focused ion beam (PFIB) system. A PFIB uses an inductively coupled plasma to deliver high beam current. The source islarger than a liquid metal ion source (LIMS), but delivers a more collimated beam, enabling better beam spot performance at high beam currents.MICROSCOPY AND ANALYSISNOVEMBER 20119a